Method of forming an inductive write head for magnetic data storage media

ABSTRACT

An inductive write head includes a first pole and a second pole that form a yoke having a write gap between the first pole and second pole. The second pole is formed of a particular Co 100-a-b ZR a CR b  compound. More specifically, the second pole is formed where “a” is in the range of about 2 atomic percent to about 18 atomic percent, and “b” is in the range of about 0.5 atomic percent to about 6 atomic percent. The magnetic write element also includes a conductive coil which lies between the first pole and the second pole. The inductive write head also includes a first yoke pedestal attached to the first pole, and a second yoke pedestal attached to the second pole, with the write gap formed therebetween. Further, the first yoke pedestal has a pedestal width that defines the write element trackwidth and that is smaller than the pedestal width of the second yoke pedestal.

This is a continuation-in-part of prior copending U.S. patent application No. 09/199,252, filed on Nov. 23, 1998, the disclosure of which is incorporated herein by reference.

BACKGROUND OF THE INVENTION

This invention relates generally to magnetic disk data storage systems, and more particularly to inductive write heads for magnetic data storage media.

Magnetic disk drives are used to store and retrieve data for digital electronic apparatus such as computers. In FIGS. 1A and 1B, a magnetic disk data storage systems 10 of the prior art includes a sealed enclosure 12, a disk drive motor 14, a magnetic disk 16, supported for rotation by a drive spindle S1 of motor 14, an actuator 18 and an arm 20 attached to an actuator spindle S2 of actuator 18. A suspension 22 is coupled at one end to the arm 20, and at its other end to a read/write head or transducer 24. The transducer 24 typically includes an inductive write element with a sensor read element (which will be described in greater detail with reference to FIG. 1C). As the motor 14 rotates the magnetic disk 16, as indicated by the arrow R, an air bearing is formed under the transducer 24 causing it to lift slightly off of the surface of the magnetic disk 16, or, as it is termed in the art, to “fly” above the magnetic disk 16. Alternatively, some transducers, known as “contact heads,” ride on the disk surface. Various magnetic “tracks” of information can be read from the magnetic disk 16 as the actuator 18 causes the transducer 24 to pivot in a short arc as indicated by the arrows P. The design and manufacture of magnetic disk data storage systems is well known to those skilled in the art.

FIG. 1C depicts a magnetic read/write head 24 including a write element 26 and a read element 28. The edges of the write element 26 and read element 28 also define an air bearing surface ABS, in a plane 29, which faces the surface of the magnetic disk 16 shown in FIG. 1A and 1B.

The read element 28 includes a first shield 36, an intermediate layer 31, which functions as a second shield, and a read sensor 40 that is located between the first shield 36 and the second shield 31 and suspended within a dielectric layer 37. The most common type of read sensor 40 used in the read/write head 30 is the magnetoresistive sensor which is used to detect magnetic field signals from a magnetic medium through changing resistance in the read sensor.

The write element 26 is typically an inductive write element. The intermediate layer 31 is shared between the read element 28 and the write element 26, forming a first pole of the write element 26. With a second pole 32, the first pole 31 forms a yoke 38. A write gap 30 is formed between the first pole 31 and the second pole 32. Specifically, the write gap 30 is located adjacent to a portion of the first pole and second pole which is sometimes referred to as the yoke tip region 33. The write gap 30 is filled with a non-magnetic material 39. Also included in write element 26, is a conductive coil 34 that is positioned within a dielectric medium 35. The conductive coil 34 of FIG. 1C is formed of a first coil C1 and a second coil C2. As is well known to those skilled in the art, these elements operate to magnetically write data on a magnetic medium such as a magnetic disk 16.

In FIG. 1D, a view taken along line 1D—1D of FIG. 1C (i.e., perpendicular to the plane 29 and therefore perpendicular to the air bearing surface ABS) further illustrates the structure of the write element 28. As can be seen from this perspective, a pole width W of the first pole 31 and second pole 32 in the yoke tip region 30 are substantially equal. A parameter of any write element is its trackwidth which affects its performance. In the configuration of FIG. 1D, the trackwidth is defined by the pole width W.

FIGS. 1E and 1F show two views of another prior art read/write head. The read element 28 of FIG. 1E is substantially the same as in the read/write head of FIG. 1C. However, above and attached to the first pole 31, is a first yoke pedestal Y1P in the yoke tip region 33, abutting the ABS. In addition, a second yoke pedestal Y2P is disposed above and aligned with the first yoke pedestal Y1P. Further, the second yoke pedestal Y2P is adjacent to the second pole 32. The write gap 30 is formed between the first and second yoke pedestals Y1P and Y2P.

The write element 26 of the prior art is shown in FIG. 1F as viewed along the line 1F—1F of FIG. 1E. Here it can be seen that the first and second yoke pedestals Y1P and Y2P have substantially equal pedestal widths Wp which are smaller than the pole width W of the first and second poles 31 and 32 in the yoke tip region 33. In this configuration, the trackwidth of the write element 28 is defined by the width Wp.

An inductive write head such as those shown in FIGS. 1C-1F operates by inducing a magnetic flux in the first and second pole. This can be accomplished by passing a writing current through the conductive coil 34. The write gap 30 allows the magnetic flux to fringe (thus forming a gap fringing field) and impinge upon a recording medium that is placed near the ABS. Thus, the strength of the gap field is a parameter of the write element performance. Other performance parameters include the non-linear transition shift (NLTS), which arises from interbit magnetostatic interactions that occur during the write process, and overwrite.

The amount of time that it takes the magnetic flux to be generated in the poles by the writing current (sometimes termed the “flux rise time”) is a critical parameter also, especially for high-speed write elements. In particular, the smaller the flux rise time, the faster the write element can record data on a magnetic media (i.e., a higher data rate). The extended flux rise time is an indicator of eddy current losses and head saturation in the write element. Thus, high data rate applications with large linear bit density and large track density can be accommodated by a writer having a large gap field and low eddy current loss.

It has been found that the yoke length YL of the second pole 32 influences the flux rise time, as is shown by the curves in the graph of FIG. 2A. The corresponding impact of yoke length on data rate can be seen with reference to the curves of FIG. 2B. As can be seen in FIGS. 2A and 2B, the flux rise time, and therefore data rate, of a typical second pole of 35% FeNi can be improved with lamination. However, such lamination can increase the fabrication process complexity, for example increasing cycle time as well as cost of fabrication.

It has also been found that materials with higher electrical resistivity ρ exhibit smaller flux rise times, which indicates that using such materials can reduce eddy current loss in a write element. Other material properties desired in a write material include high saturation magnetic flux density Bs, low saturation magnetostriction λs, and good corrosion resistance.

Materials that have been used to form the poles in write elements include NiFe, CoFe, CoNiFe, CoZrTa, and FeN. The saturation magnetic flux density, saturation magnetostriction λs, and corrosion resistance of these materials are listed in the table of FIG. 3. Higher Fe concentration in NiFe alloy does enhance its saturation magnetic flux density Bs, but the magnetostriction λs of the resultant NiFe alloy increases rapidly. For example, Ni₄₅Fe₅₅ has Bs and λs values of 15.5 kGauss and 20×10⁻⁶, respectively. In addition, the NiFe alloy family has low electrical resistivity which can inhibit high speed applications because of high eddy current losses. CoFe and CoNiFe also suffer from low electrical resistivity. Also, while Fe-based nitride films and their derivatives can have high Bs values when the nitrogenized films are in crystallized bcc phase, they require film lamination to overcome their low electrical resistivity for high data rate applications. As an additional option, CoZrTa, having a relatively large electrical resistivity, can be used. However, CoZrTa exhibits poor corrosion resistance and is therefore less desirable for write element pole use. For example, the corrosion resistance of CoZrTa is exemplified in the graphs of FIGS. 4A and 4B which show Tafel plots using 0.01 M NaCl and Na₂SO₄ electrolytes, respectively.

Thus, what is desired is an improved write element design that can effectively operate at high speeds while significantly resisting corrosion. Further, such a write element that can write at high data densities is desired.

SUMMARY OF THE INVENTION

The present invention provides a write element and method for making the same that provides high write performance and significantly resists corrosion. Further, fabrication of the write element is inexpensive and entails low complexity. Specifically, a magnetic material formed of CoZrCr forms a second pole of a write element. Particular formulations of this material exhibit high resistivity which reduces eddy currents, thereby decreasing flux rise time and facilitating high speed data recording. More particularly, the write element can include a first pedestal and a second pedestal, the write element trackwidth being defined by the first pedestal width. This configuration facilitates high density recording. A write element having this configuration and incorporating the CoZrCr second pole provides high speed, high density magnetic data recording.

According to an embodiment of the present invention, a magnetic write element for use in high speed magnetic recording includes a first pole having a first pole tip, and a second pole having a second pole tip which defines a write gap with the first pole tip. The second pole is formed of a Co_(100-a-b)Zr_(a)Cr_(b) compound, where “a” is in the range of about 2 atomic percent to about 18 atomic percent, and “b” is in the range of about 0.5 atomic percent to about 6 atomic percent. The magnetic write element also includes a conductive coil which lies between the first pole and the second pole. The write element with such a Co_(100-a-b)Zr_(a)Cr_(b) compound results in a smaller flux rise time which supports high data rate and high density recording while minimizing corrosivity.

In another embodiment of the present invention, a magnetic device for high density magnetic recording includes a first pole having a first pole tip portion, and a first yoke pedestal, having a first width, connected to the first pole at the first pole tip portion. The magnetic device also includes a second pole, having a second pole tip portion, and a second yoke pedestal. The second pole is formed of a Co_(100-a-b)Zr_(a)Cr_(b) compound, where “a” is in the range of about 2 atomic percent to about 18 atomic percent, and “b” is in the range of about 0.5 atomic percent to about 6 atomic percent. The second yoke pedestal is connected to the second pole at the second pole tip portion and aligned with the first yoke pedestal, and has a second width that is larger than the first width. Also, a write gap is formed between the first yoke pedestal and the second yoke pedestal, while a conductive coil is positioned between the first pole and the second. The use of such a compound in a write element so configured provides good high density recording performance while minimizing corrosivity.

In yet another embodiment of the present invention, a method for forming a write element, including forming a first pole, forming a first insulation layer over the first pole, forming a conductive coil layer over the first insulation layer, and covering said conductive coil layer with non-magnetic and electrically insulating material. The method also includes forming a second pole, over the non-magnetic and electrically insulating material, of a CoZrCr compound having a stoichiometric composition of Co_(100-a-b)Zr_(a)Cr_(b), where “a” is in the range of about 2 atomic percent to about 18 atomic percent, and “b” is in the range of about 0.5 atomic percent to about 6 atomic percent. With such a method, a write element capable of high performance high density recording can be formed, which also exhibits low corrosivity.

These and other advantages of the present invention will become apparent to those skilled in the art upon a reading of the following descriptions of the invention and a study of the several figures of the drawing.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be readily understood by the following detailed description in conjunction with the accompanying drawings, wherein like reference numerals designate like elements.

FIG. 1A is a partial cross-sectional front elevation view of a magnetic data storage system;

FIG. 1B is a top plan view along line 1B—1B of FIG. 1A;

FIG. 1C is a cross-sectional view of a prior art read/write head of the magnetic disk drive assembly of FIGS. 1A and 1B;

FIG. 1D is an end view taken along line 1D—1D of FIG. 1C, of a prior art write element of the read/write head of FIG. 1C;

FIG. 1E is a cross-sectional view of another prior art read/write head of the magnetic disk drive assembly of FIGS. 1A and 1B;

FIG. 1F is an end view taken along line 1F—1F of FIG. 1E, of a prior art write element of the read/write head of FIG. 1E;

FIG. 2A is a graph of the variation of flux rise time exhibited by prior art write elements with varying yoke length;

FIG. 2B is a graph of the variation of recorded data rate with varying yoke length, as exhibited with write elements of the prior art.

FIG. 3 is a table of various material characteristics of materials used in second poles of the prior art;

FIG. 4A is a graph illustrating the corrosion resistance of CoZrTa in NaCl electrolyte;

FIG. 4B is a graph illustrating the corrosion resistance of CoZrTa in NA₂ SO₄ electrolyte;

FIG. 5A is a graph of the variation of flux rise time with varying yoke length, exhibited by a write element in accordance with an embodiment of the present invention, in comparison with similar variations exhibited by prior art write elements;

FIG. 5B is a graph of the variation of recorded data rate with varying yoke length exhibited by a write element in accordance with an embodiment of the present invention, in comparison with similar variations exhibited by prior art write elements;

FIG. 6 is a table of various material characteristics of CoZrCr used in a second pole according to an embodiment of the present invention, in comparison with such characteristics of the prior art;

FIG. 7A is a graph illustrating the corrosion resistance of CoZrCr and CoZrTa in NaCl electrolyte;

FIG. 7B is a graph illustrating the corrosion resistance of CoZrCr and CoZrTa in Na₂SO₄ electrolyte;

FIG. 8A is a cross-sectional view of a read/write head, according to an embodiment of the present invention;

FIG. 8B is an end view of the read/write head of FIG. 8A taken along line 8B—8B of FIG. 8A;

FIG. 9 is a graph of the gap field versus write current exhibited by the write element of FIGS. 8A and 8B, according to an embodiment of the present invention;

FIG. 10 is a graph of the NLTS and overwrite characteristics versus write current of the write element of FIGS. 8A and 8B, according to an embodiment of the present invention;

FIG. 11 is a process diagram of a method for forming a read/write head, according to an embodiment of the present invention;

FIG. 12 is a process diagram of a method for forming a tip stitch pole in the method of FIG. 11, according to an embodiment of the present invention;

FIG. 13 is a process diagram of a method for forming a second pole in the method of FIG. 11, according to an embodiment of the present invention; and

FIG. 14 is a process diagram of a method for improving thermal stability of a write yoke, according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIGS. 1-4 were discussed with reference to the prior art. An embodiment of the present invention includes the use of a CoZrCr compound exhibiting high electrical resistivity ρ which results in high speed recording capabilities when used in write element poles. The effect of an electrical resistivity ρ on the order of 90 μΩ-cm on flux rise time is shown in FIG. 5A for varying yoke length YL. As shown by the curves of FIG. 5A, the CoZrCr compound results in substantially shorter flux rise times than those with the 35% FeNi without lamination. In addition, the CoZrCr performance is better than or substantially similar to that with 35% FeNi with one layer lamination across a wide range of yoke lengths. The flux rise time responses are indicative of the data rate performance of the write element, as is demonstrated in FIG. 5B.

FIG. 5B illustrates the data rate experienced with the CoZrCr compound, in comparison with 35% FeNi both with and without one layer lamination. Again, across substantially all yoke lengths, the CoZrCr compound produces higher data rates than the 35% FeNi without lamination. Also, the curves show the data rate of the CoZrCr compound as being substantially similar to or greater than that of the 35% FeNi with one layer lamination, for a wide range of yoke length. Because the performance of the CoZrCr compound relative to the laminated FeNi, and the inherent drawbacks of lamination, using the high resistivity CoZrCr is a more effective approach to improving flux rise time and data rate than implementing laminations in the yoke.

In addition to high electrical resistivity, the CoZrCr compound exhibits other characteristics that make it a particularly suitable material for use in the yoke of a write element. As shown in FIG. 6 and compared with other yoke materials, a Co_(92.5)Zr_(5.2)Cr_(2.3) compound has a saturation field of about 13.5 kGauss, an electrical resistivity of about 90 to about 95, and a magnetostriction of about 3×10⁻⁶. In addition, the Co_(92.5)Zr_(5.2)Cr_(2.3) compound has a good resistance to corrosion. This resistance to corrosion can be seen in FIGS. 7A and 7B, in comparison with the behavior of a CoZrTa compound. Specifically, FIGS. 7A and 7B show Tafel plots for films of the two compounds using a NaCl electrolyte and a Na₂SO₄ electrolyte, respectively. As can be easily seen, the CoZrCr compound is significantly more corrosion resistant than is the CoZrTa compound tested.

In addition to the particular Co_(92.5)Zr_(5.2)Cr_(2.3) compound, other stoichiometric compositions of CoZrCr can work well. For example, a composition of Co_(100-a-b)Zr_(a)Cr_(b), where “a” is in the range of about 2 to about 18 atomic percent and “b” is in the range of about 0.5 to about 6 atomic percent, can be satisfactory for high speed data recording. More specifically, “a” in the range of about 4 to about 9 atomic percent and “b” in the range of about 1 to about 3 atomic percent, can work well. In addition to high electrical resistivity and good corrosion resistance, this compound further possesses a soft magnetic property, with coercivity Hc about equal to zero (i.e., with hard axis coercivity Hch and easy axis coercivity Hce less than about 0.2).

A write element configuration according to another embodiment of the present invention is illustrated in FIGS. 8A and 8B. FIG. 8A shows a cross-sectional view of a read/write head 50 incorporating a write element 52 having a particular geometry, formed over a read element 53. The write element 50 includes a first pole 54, a second pole 56, and a conductive coil 58 that is embedded within a non-magnetic and electrically insulating material 60. In addition, the write element 50 incorporates a first yoke pedestal (Y1P) 62 adjacent to the first pole 54 in the yoke tip region 64. Further, a second yoke pedestal (Y2P) 66 is adjacent the second pole 56, also in the yoke tip region 64, and defines a write gap 68 between it and the first yoke pedestal 62. The write gap 68 is filled with non-magnetic material 67. Additionally, the Y1P 62, Y2P 66, and write gap 68 combine to form a tip stitch pole (TSP) 69. The particular geometry of the write element 52 can be more easily understood with reference to FIG. 8B.

FIG. 8B shows a partial end view of the write element 52 in the direction marked as 8B—8B in FIG. 8A. As can be seen from this view, the first yoke pedestal (Y1P) 62 is characterized by a first width W1, while the second yoke pedestal (Y2P) 66 is characterized by a second width W2. In the operation of such a write element, it is found that the trackwidth TW of the write element is substantially equal to the first width W1 of the first yoke pedestal, and thus is a first yoke pedestal defined (Y1P-defined) write element. Thus, a smaller trackwidth can be defined while the second width W2 of the second yoke pedestal Y2P can remain relatively similar to the width W of the second pole 56 to minimize flux leakage.

When this configuration is used in conjunction with a CoZrCr compound, the write element can produce a very large gap field, which is an important factor for high areal density applications in conjunction with high coercivity magnetic media, such as magnetic disk 16 of FIG. 1A. For example, FIG. 9 shows a graph of gap field versus write current for the Co_(92.5)Zr_(5.2)Cr_(2.3) compound. In addition, the use of this compound with the particular write element geometry shown in FIGS. 8A and 8B, at a high data rate of 500 Mb/s, results in the write performance shown by the curves of FIG. 10. Specifically, the data of FIG. 10 pertains to a disk media having a high coercivity of about 4000 Oe and an Mrt of about 0.4 memu/cm². This performance indicates that this material is a good candidate for high areal density recording in conjunction with high coercivity magnetic media. Further, because of its other material properties, such a write head is also particularly well suited to high speed data recording.

A method 80 for forming a read/write element according to yet another embodiment of the present invention, is shown by the process diagram of FIG. 11. In operation 82, a read element including a second shield is formed. The read element further includes a first shield and a read sensor, each component of the read element being formed of various materials and by various methods known to those skilled in the art. In operation 84, a Y1P-defined tip stitch pole (TSP) is formed over the second shield which also performs as a first pole. The layers of the TSP can be formed using convention processes such as plating, sputtering, and various possible etching techniques. The formation of the Y1P-defined geometry is further discussed below with reference to FIG. 12.

A first insulation layer is also formed over the first pole in operation 86. This can be accomplished by sputter deposition of a non-magnetic and electrically insulating material over the first pole, and may further entail etching or planarizing of the non-magnetic and electrically insulating material. In operation 88, overlying coil layers embedded and electrically isolated within insulation layers are successively formed over the first insulation layer. A second pole is formed in operation 90 over the overlying coil layers and over the Y1P-defined tip stitch pole.

FIG. 12 further outlines operation 84 of FIG. 11. In operation 94 a first yoke pedestal (Y1P) is formed over the first pole, with a first width W1. The Y1P material can be made of the same material as used to form the first pole, such as Permalloy. A nonmagnetic gap material layer is deposited over the Y1P in operation 96. Operation 84 also includes the formation, in operation 98, of a second yoke pedestal over the gap material layer, with a second width W2 that is larger than the first width W1. Alternatively, the width W2 of the second yoke pedestal can be smaller than or equal to the width W1 of the first yoke pedestal.

Operation 90 of the method in FIG. 11 is expanded upon in the process diagram of FIG. 13. Specifically, operation 90 pertains to formation of the second pole through DC magnetron sputtering of CoZrCr or other high Bs and high resistivity materials. In operation 102, the sputter deposition power is set at about 2.5 kW, while the gas (e.g., argon) pressure inside the deposition chamber is set at about 4 mTorr in operation 104. Operation 106 includes setting the substrate bias at about 75V. Alternatively, the substrate bias can be less than about 75V. The alignment field to obtain magnetic anisotropy in the deposition film is set at about 80 Oe in operation 108, and the target to wafer distance is set at about 5 inches. Under these conditions, CoZrCr is sputter deposited over the Y1P-defined tip stitch pole, coil layers, and insulation layers. With this deposition process, a Co_(92.5)Zr_(5.2)Cr_(2.3)compound can be easily formed. This material then provides high areal density and high speed recording capability while resisting corrosion well.

Desirable write performance can be attained when the field-induced anisotropy Hk of the yoke materials is thermally stable. In some embodiments of the present invention, a CoZrCr field-induced anisotropy Hk that is set during deposition may not be desirably thermally stable. For example, sputter deposited CoZrCr that is amorphous can have a field-induced anisotropy Hk set during deposition by external field that is more thermally unstable than desired. In such embodiments, the field-induced anisotropy Hk can be made more thermally stable through subsequent operations. For example, method 120 can be used to twice annealed the CoZrCr, as illustrated in the process diagram of FIG. 14.

As shown in FIG. 14, in operation 122 the CoZrCr can be first annealed in an easy axis direction of the CoZrCr. More specifically, this annealing can be performed with an external field of about 6000 Oe applied along the easy axis at about 225° C. for about two hours. Then, after cooling to between about 25° C. and 60° C., the CoZrCr can be annealed again in operation 124 with an external field of about 6000 Oe along the hard axis at about 225° C. for about two hours. With such a process the anisotropy Hk can change from about 14 to about 15 to about 5 Oe before the first anneal, before the second anneal, and after the second anneal, respectively. Likewise, the easy axis coercivity Hce can change from about 0.06 to about 0.09 to about 0.03 Oe. In addition, with this process, the hard axis coercivity Hch can change from about 0.12 to about 0.14 to about 0.08 Oe. As a result, the pole including CoZrCr has a sufficiently low anisotropy field Hk, and the anisotropy direction is substantially thermally stable. For example, CoZrCr subjected to such operations substantially does not rotate when subsequently annealed with a 6000 Oe external field at ≦225° C.

Although the foregoing invention has been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. Accordingly, the present embodiments are to be considered as illustrative and not restrictive, and the invention is not to be limited to the details given herein, but may be modified within the scope and equivalents of the appended claims. 

What is claimed is:
 1. A method for forming a magnetic write element, comprising: forming a first pole; forming a first insulation layer over said first pole; forming a conductive coil layer over said first insulation layer; covering said conductive coil layer with non-magnetic and electrically insulating material; forming a second pole over said non-magnetic and electrically insulating material, said second pole being formed of a CoZrCr compound having a stoichiometric composition of Co_(100-a-b)Zr_(a)Cr_(b), where “a” is in the range of about 2 atomic percent to about 18 atomic percent, and “b” is in the range of about 0.5 atomic percent to about 6 atomic percent.
 2. The method as recited in claim 1, wherein said forming said second pole includes deposition of said CoZrCr compound by a physical vapor deposition process such as DC magnetron or RF diode sputtering techniques.
 3. The method as recited in claim 2, wherein said deposition of said CoZrCr compound is performed with sputter deposition power of about 2.5 kW, with gas pressure inside a deposition chamber of about 4mTorr, substrate bias at about 75V, alignment field to obtain magnetic anisotropy in a deposition film at about 80 Oe, and target to wafer distance at about 5 inches.
 4. The method as recited in claim 1, wherein “a” is in the range of about 4.5 atomic percent to about 9 atomic percent.
 5. The method as recited in claim 1, wherein “b” is in the range of about 1 atomic percent to about 3 atomic percent.
 6. The method as recited in claim 1, wherein said CoZrCr compound is about 92.5 atomic percent of Co, about 5.2 atomic percent of Zr, and about 2.3 atomic percent of Cr.
 7. The method as recited in claim 1, wherein forming said second pole includes annealing said second pole CoZrCr compound along an easy axis direction of said CoZrCr compound, and annealing said second pole CoZrCr compound along a hard axis direction of said CoZrCr compound.
 8. The method as recited in claim 7, wherein said annealing along said easy axis direction includes applying to said CoZrCr compound an external field of about 6000 Oe along said easy axis direction at about 225° C. for about two hours, and wherein said annealing along said hard axis direction includes applying to said CoZrCr compound an external field of about 6000 Oe along said hard axis direction at about 225° C. for about two hours. 